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Micron Technology 8KTF25664HZ-1G4M1 2GB
Samsung M471B5673FH0-CF8 2GB
Compare
Micron Technology 8KTF25664HZ-1G4M1 2GB vs Samsung M471B5673FH0-CF8 2GB
Overall score
Micron Technology 8KTF25664HZ-1G4M1 2GB
Overall score
Samsung M471B5673FH0-CF8 2GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8KTF25664HZ-1G4M1 2GB
Report a bug
Faster write speed, GB/s
7.2
6.8
Average value in the tests
Higher memory bandwidth, mbps
10600
8500
Around 1.25% higher bandwidth
Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
30
41
Around -37% lower latency
Faster reading speed, GB/s
10.6
10
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8KTF25664HZ-1G4M1 2GB
Samsung M471B5673FH0-CF8 2GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
41
30
Read speed, GB/s
10.0
10.6
Write speed, GB/s
7.2
6.8
Memory bandwidth, mbps
10600
8500
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
Timings / Clock speed
7-7-7-20 / 1333 MHz
7-7-7-20 / 1066 MHz
Ranking PassMark (The more the better)
1210
1479
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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