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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

总分
star star star star star
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    62 left arrow 72
    左右 14% 更低的延时
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB 需要考虑的原因
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.3 left arrow 7.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.0 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 72
  • 读取速度，GB/s
    7.4 left arrow 15.3
  • 写入速度，GB/s
    5.9 left arrow 8.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1612 left arrow 1817

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM的比较

Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
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