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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Kingston KVR800D2E5-2G 2GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB vs Kingston KVR800D2E5-2G 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
总分
Kingston KVR800D2E5-2G 2GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
报告一个错误
低于PassMark测试中的延时,ns
30
63
左右 52% 更低的延时
更快的读取速度,GB/s
8.8
4
测试中的平均数值
更快的写入速度,GB/s
5.6
3,139.2
测试中的平均数值
更高的内存带宽,mbps
10600
6400
左右 1.66% 更高的带宽
需要考虑的原因
Kingston KVR800D2E5-2G 2GB
报告一个错误
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Kingston KVR800D2E5-2G 2GB
主要特点
存储器类型
DDR3
DDR2
PassMark中的延时,ns
30
63
读取速度,GB/s
8.8
4,027.7
写入速度,GB/s
5.6
3,139.2
内存带宽,mbps
10600
6400
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度
7-7-7-20 / 1333 MHz
5-5-5-15 / 800 MHz
排名PassMark (越多越好)
1344
739
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB RAM的比较
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C17-8GTZRB 8GB
Kingston KVR800D2E5-2G 2GB RAM的比较
Kingston KP223C-ELD 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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报告一个错误
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Bug description
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