Hynix Semiconductor (Hyundai Electronics) HYMP512R72P4-E3 1GB vs Kingston KVR533D2N4 512MB

总分

Hynix Semiconductor (Hyundai Electronics) HYMP512R72P4-E3 1GB

Hynix Semiconductor (Hyundai Electronics) HYMP512R72P4-E3 1GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HYMP512R72P4-E3 1GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP512R72P4-E3 1GB

报告一个错误

低于PassMark测试中的延时，ns

55 75

左右 27% 更低的延时
更快的读取速度，GB/s

3 1

测试中的平均数值

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

更快的写入速度，GB/s

1,672.1 1,608.0

测试中的平均数值
更高的内存带宽，mbps

4200 3200

左右 1.31 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HYMP512R72P4-E3 1GB

Kingston KVR533D2N4 512MB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

55 75
读取速度，GB/s

3,189.0 1,943.5
写入速度，GB/s

1,608.0 1,672.1
内存带宽，mbps

3200 4200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

3-3-3-12 / 400 MHz 4-4-4-12 / 533 MHz
排名PassMark (越多越好)

501 301

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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