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Kingston 99U5429-007.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) 99P5316-014.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB vs Hynix Semiconductor (Hyundai Electronics) 99P5316-014.A00LF 2GB

总分
star star star star star
Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) 99P5316-014.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) 99P5316-014.A00LF 2GB

差异 规格 评论

差异

Kingston 99U5429-007.A00LF 2GB 需要考虑的原因
Kingston 99U5429-007.A00LF 2GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) 99P5316-014.A00LF 2GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) 99P5316-014.A00LF 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    59 left arrow 75
    左右 -27% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,325.7 left arrow 2,036.1
    测试中的平均数值

规格

完整的技术规格清单
Kingston 99U5429-007.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) 99P5316-014.A00LF 2GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    75 left arrow 59
  • 读取速度，GB/s
    3,986.4 left arrow 4,940.8
  • 写入速度，GB/s
    2,036.1 left arrow 2,325.7
  • 内存带宽，mbps
    6400 left arrow 6400
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    714 left arrow 772

Kingston 99U5429-007.A00LF 2GB RAM的比较

Samsung M378T5663DZ3-CF7 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Hynix Semiconductor (Hyundai Electronics) 99P5316-014.A00LF 2GB RAM的比较

Samsung M471A1K43BB1-CRC 8GB
Samsung M471A5143SB1-CRC 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) 99P5316-014.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) 99P5316-014.A
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