RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D083805EV 2GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
比较
takeMS International AG TMS2GB264D083805EV 2GB vs Micron Technology 8ATF51264HZ-2G1A2 4GB
总分
takeMS International AG TMS2GB264D083805EV 2GB
总分
Micron Technology 8ATF51264HZ-2G1A2 4GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
更快的读取速度,GB/s
3
13.6
测试中的平均数值
需要考虑的原因
Micron Technology 8ATF51264HZ-2G1A2 4GB
报告一个错误
低于PassMark测试中的延时,ns
36
50
左右 -39% 更低的延时
更快的写入速度,GB/s
9.0
1,457.4
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
50
36
读取速度,GB/s
3,757.3
13.6
写入速度,GB/s
1,457.4
9.0
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
557
1778
takeMS International AG TMS2GB264D083805EV 2GB RAM的比较
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 8ATF51264HZ-2G1A2 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD8GX3M2A2933C12 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CM4X8GF2400C16N2 8GB
Kingston KVR16N11/8-SP 8GB
Kingston LV32D4U2S8HD-8X 8GB
Kingston 9905471-002.A00LF 2GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
A-DATA Technology DDR3 1600 4GB
Transcend Information JM2666HLB-8G 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston KHX21334D4/8G 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
Samsung M391B5673EH1-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Kingston 99U5474-023.A00LF 4GB
G Skill Intl F4-3866C18-8GTZR 8GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-4133C19-8GTZKW 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMT16GX4M2C3200C14 8GB
Kllisre KRE-D3U1600M/8G 8GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
G Skill Intl F3-2800C12-8GTXDG 8GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
报告一个错误
×
Bug description
Source link