Micron Technology 36JSF2G72PZ-1G9E1 16GB
Samsung M323R2GA3BB0-CQKOD 16GB

Micron Technology 36JSF2G72PZ-1G9E1 16GB vs Samsung M323R2GA3BB0-CQKOD 16GB

Overall score
star star star star star
Micron Technology 36JSF2G72PZ-1G9E1 16GB

Micron Technology 36JSF2G72PZ-1G9E1 16GB

Overall score
star star star star star
Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

Differences

  • Below the latency in the PassMark tests, ns
    25 left arrow 48
    Around -92% lower latency
  • Faster reading speed, GB/s
    13.4 left arrow 10.6
    Average value in the tests
  • Faster write speed, GB/s
    12.1 left arrow 8.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 14200
    Around 1.35 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 36JSF2G72PZ-1G9E1 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR5
  • Latency in PassMark, ns
    48 left arrow 25
  • Read speed, GB/s
    10.6 left arrow 13.4
  • Write speed, GB/s
    8.1 left arrow 12.1
  • Memory bandwidth, mbps
    14200 left arrow 19200
Other
  • Description
    PC3-14200, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 left arrow PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
  • Timings / Clock speed
    no data left arrow no data / 2400 MHz
  • Ranking PassMark (The more the better)
    2357 left arrow 3419
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons