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Micron Technology 4JTF12864AZ-1G4D1 1GB
Samsung M378B5673FH0-CH9 2GB
Compare
Micron Technology 4JTF12864AZ-1G4D1 1GB vs Samsung M378B5673FH0-CH9 2GB
Overall score
Micron Technology 4JTF12864AZ-1G4D1 1GB
Overall score
Samsung M378B5673FH0-CH9 2GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 4JTF12864AZ-1G4D1 1GB
Report a bug
Below the latency in the PassMark tests, ns
26
35
Around 26% lower latency
Reasons to consider
Samsung M378B5673FH0-CH9 2GB
Report a bug
Faster reading speed, GB/s
14.4
13.8
Average value in the tests
Faster write speed, GB/s
9.5
7.6
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 4JTF12864AZ-1G4D1 1GB
Samsung M378B5673FH0-CH9 2GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
26
35
Read speed, GB/s
13.8
14.4
Write speed, GB/s
7.6
9.5
Memory bandwidth, mbps
10600
10600
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
Timings / Clock speed
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
1809
2321
Micron Technology 4JTF12864AZ-1G4D1 1GB RAM comparisons
G Skill Intl F4-2400C16-4GFX 4GB
Samsung M378B5673FH0-CH9 2GB RAM comparisons
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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