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Samsung M395T2863QZ4-CF76 1GB
Infineon (Siemens) AET560UD00-370A98Z 256MB

Samsung M395T2863QZ4-CF76 1GB vs Infineon (Siemens) AET560UD00-370A98Z 256MB

Overall score
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Overall score
star star star star star
Infineon (Siemens) AET560UD00-370A98Z 256MB

Infineon (Siemens) AET560UD00-370A98Z 256MB

Differences Specifications Comments

Differences

Samsung M395T2863QZ4-CF76 1GB Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
  • Faster write speed, GB/s
    2,404.5 left arrow 1,746.7
    Average value in the tests
  • Higher memory bandwidth, mbps
    6400 left arrow 4200
    Around 1.52% higher bandwidth
Infineon (Siemens) AET560UD00-370A98Z 256MB Reasons to consider
Infineon (Siemens) AET560UD00-370A98Z 256MB
Report a bug
  • Below the latency in the PassMark tests, ns
    47 left arrow 104
    Around -121% lower latency
  • Faster reading speed, GB/s
    3 left arrow 3
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Infineon (Siemens) AET560UD00-370A98Z 256MB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    104 left arrow 47
  • Read speed, GB/s
    3,192.0 left arrow 3,627.2
  • Write speed, GB/s
    2,404.5 left arrow 1,746.7
  • Memory bandwidth, mbps
    6400 left arrow 4200
Other
  • Description
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5
  • Timings / Clock speed
    no data left arrow 4-4-4-12 / 533 MHz
  • Ranking PassMark (The more the better)
    786 left arrow 259

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