Samsung M471B5773DH0-CK0 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Samsung M471B5773DH0-CK0 2GB vs Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Overall score
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Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Differences

  • Below the latency in the PassMark tests, ns
    27 left arrow 65
    Around 58% lower latency
  • Faster write speed, GB/s
    7.8 left arrow 1,592.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 5300
    Around 2.42% higher bandwidth
  • Faster reading speed, GB/s
    3 left arrow 12.2
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M471B5773DH0-CK0 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR2
  • Latency in PassMark, ns
    27 left arrow 65
  • Read speed, GB/s
    12.2 left arrow 3,580.8
  • Write speed, GB/s
    7.8 left arrow 1,592.0
  • Memory bandwidth, mbps
    12800 left arrow 5300
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 5-5-5-15 / 667 MHz
  • Ranking PassMark (The more the better)
    1763 left arrow 572
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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